SGW15N120(2009) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SGW15N120
(Rev.:2009)

Fast IGBT in NPT-technology

Infineon Technologies 

SGP15N120

SGW15N120

20V

15V

Ciss

1nF

UCE=960V

10V

5V

0V

0nC

50nC 100nC 150nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC = 15A)

100pF

Coss

Crss

0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

30µs

20µs

10µs

0µs

10V 11V 12V 13V 14V 15V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 1200V, start at Tj = 25°C)

300A

250A

200A

150A

100A

50A

0A

10V 12V 14V 16V 18V 20V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)

Power Semiconductors

8

Rev. 2.6 Nov. 09

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