SGW15N120(2009) Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

SGW15N120
(Rev.:2009)

Fast IGBT in NPT-technology

Infineon Technologies 

SGP15N120

SGW15N120

Fast IGBT in NPT-technology

• 40% lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

- SMPS

• NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

PG-TO-220-3-1

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C

G

E

PG-TO-247-3

Type

SGP15N120

SGW15N120

VCE

IC

1200V 15A

1200V 15A

Eoff

1.5mJ

1.5mJ

Tj

150°C

150°C

Marking Package

GP15N120 PG-TO-220-3-1

SGW15N120 PG-TO-247-3

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 1200V, Tj ≤ 150°C

Gate-emitter voltage

Avalanche energy, single pulse

IC = 15A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C

Short circuit withstand time2

VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction and storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Symbol

VCE

IC

ICpuls

-

VGE

EAS

tSC

Ptot

Tj , Tstg

-

Value

Unit

1200

V

A

30

15

52

52

±20

V

85

mJ

10

µs

198

W

-55...+150

°C

260

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1

Rev. 2.6 Nov. 09

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