IGW15N120H3 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
IGW15N120H3 Datasheet PDF : 14 Pages
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IGW15N120H3
Highspeedswitchingseriesthirdgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
IC
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C
-
Gate-emitter voltage
VGE
Short circuit withstand time
VGE=15.0V,VCC≤600V
Allowed number of short circuits < 1000
tSC
Time between short circuits: ≥ 1.0s
Tvj=175°C
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
Operating junction temperature
Tvj
Storage temperature
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
1200
V
30.0
A
15.0
60.0
A
60.0
A
±20
V
µs
10
217.0
105.0
W
-40...+175
°C
-55...+150
°C
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.70
K/W
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
IGES
Transconductance
gfs
VGE=0V,IC=0.50mA
VGE=15.0V,IC=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.50mA,VCE=VGE
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=15.0A
Value
Unit
min. typ. max.
1200 -
-V
-
-
2.05 2.40
2.50 -
V
- 2.70 -
5.0 5.8 6.5 V
-
- 250.0 µA
-
- 2500.0
-
- 600 nA
- 7.5 - S
4
Rev.2.1,2014-12-01
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