G315Y Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
G315Y Datasheet PDF : 7 Pages
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STPS3150-Y
Characteristics
Figure 3.
Non repetitive surge peak forward
current versus overload duration
(maximum values)
IM(A)
12
11
10
9
8
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
SMB
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
Figure 4. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1 µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
0
25
50
Tj(°C)
75
100
125
150
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Zth(j-a)/Rth(j-a)
1.0
SMB
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Figure 7.
Reverse leakage current versus
reverse voltage applied (typical
values)
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
1.E+00
Tj=50°C
1.E-01
1.E-02
0
Tj=25°C
VR(V)
25
50
75
100
125
150
Figure 8.
Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
10
1
VR(V)
10
100
1000
Doc ID 018926 Rev 1
3/7
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