SPA12N50C3 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
SPA12N50C3 Datasheet PDF : 13 Pages
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SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax 560 V
RDS(on)
0.38 Ω
ID
11.6 A
• Periodic avalanche rated
P-TO220-3-31 P-TO262
P-TO263-3-2 P-TO220-3-1
• Extreme dv/dt rated
2
• Ultra low effective capacitances
3
12
• Improved transconductance
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
23
1
Type
SPP12N50C3
SPB12N50C3
SPI12N50C3
SPA12N50C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4579
P-TO263-3-2 Q67040-S4641
P-TO262
Q67040-S4578
P-TO220-3-31 Q67040-S4577
Marking
12N50C3
12N50C3
12N50C3
12N50C3
Maximum Ratings
Parameter
Symbol
Value
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
SPP_B_I SPA
11.6
7
11.61)
71)
34.8
34.8
340
340
0.6
0.6
11.6
11.6
±20
±20
±30
±30
125
33
-55...+150
Unit
A
A
mJ
A
V
W
°C
Rev. 2.1
Page 1
2004-03-29
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