IXXN110N65C4H1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXXN110N65C4H1 Datasheet PDF : 7 Pages
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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 110A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 55A, VGE = 15V
VCE = 400V, RG = 2
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 55A, VGE = 15V
VCE = 400V, RG = 2
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
24
40
S
3690
pF
440
pF
140
pF
180
nC
32
nC
76
nC
35
ns
46
ns
2.30
mJ
143
ns
30
ns
0.60
1.05 mJ
30
ns
32
ns
2.90
mJ
130
ns
43
ns
0.77
mJ
0.20 °C/W
0.05
°C/W
IXXN110N65C4H1
SOT-227B miniBLOC (IXXN)
Reverse Sonic Diode (FRD)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF
I
F
=
100A,
VGE
=
0V,
Note
1
Characteristic Values
Min.
Typ. Max.
TJ = 150C
1.7
2.3 V
1.8
V
IRM
IF = 100A, VGE = 0V,
TJ = 150C
95
A
trr
-diF/dt = 1500A/sVR = 300V
100
ns
RthJC
0.42 C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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