IXXX110N65B4H1 Ver la hoja de datos (PDF) - IXYS CORPORATION
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componentes Descripción
Fabricante
IXXX110N65B4H1 Datasheet PDF : 7 Pages
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Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
200
100
180
tri
td(on) - - - -
TJ = 150ºC, VGE = 15V
160
VCE = 400V
140
90
I C = 110A
80
70
120
60
100
50
I C = 55A
80
40
60
30
40
20
20
10
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
180
70
160
tri
td(on) - - - -
65
RG = 2Ω , VGE = 15V
140
VCE = 400V
60
120
55
I C = 110A
100
50
80
45
60
40
40
35
I C = 55A
20
30
0
25
25
50
75
100
125
150
TJ - Degrees Centigrade
IXXK110N65B4H1
IXXX110N65B4H1
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
160
60
140
tri
td(on) - - - -
55
RG = 2Ω , VGE = 15V
120
VCE = 400V
50
100
TJ = 25ºC
80
45
TJ = 150ºC
40
60
35
40
30
20
25
55 60 65 70 75 80 85 90 95 100 105 110
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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