IXXN110N65B4H1 Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXXN110N65B4H1 Datasheet PDF : 7 Pages
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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
5.0
18
4.5
Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
4.0
VCE = 400V
3.5
3.0
16
14
12
I C = 110A
10
2.5
8
2.0
6
1.5
4
1.0
I C = 55A
2
0.5
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.0
3.6 Eoff
Eon - - - -
RG = 2Ω , VGE = 15V
3.2 VCE = 400V
2.8
2.4
I C = 110A
2.0
1.6
I C = 55A
1.2
0.8
0.4
25
50
75
100
125
TJ - Degrees Centigrade
10
9
8
7
6
5
4
3
2
1
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
170
180
150
tfi
td(off) - - - - 170
RG = 2Ω , VGE = 15V
130
VCE = 400V
160
110
150
90
TJ = 150ºC
140
70
TJ = 25ºC
130
50
120
30
110
10
100
55 60 65 70 75 80 85 90 95 100 105 110
IC - Amperes
IXXN110N65B4H1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
4.2
10
3.8
Eoff
Eon - - - -
9
3.4
RG = 2Ω , VGE = 15V
8
VCE = 400V
3.0
7
2.6
6
2.2
5
1.8 TJ = 150ºC
4
1.4
3
1.0
2
TJ = 25ºC
0.6
1
0.2
0
55 60 65 70 75 80 85 90 95 100 105 110
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
200
500
180
tfi
td(off) - - - -
450
160
TJ = 150ºC, VGE = 15V
400
VCE = 400V
140
I C = 55A
350
120
300
100
250
80
200
60
150
40
I C = 110A
100
20
50
0
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
160
280
140
tfi
td(off) - - - -
RG = 2Ω , VGE = 15V
240
VCE = 400V
120
I C = 55A
200
100
160
80
120
60
I C = 110A
80
40
40
20
25
0
50
75
100
125
150
TJ - Degrees Centigrade
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