IXXN110N65B4H1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXXN110N65B4H1 Datasheet PDF : 7 Pages
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IXXN110N65B4H1
Fig. 7. Transconductance
50
TJ = - 40ºC
40
25ºC
30
150ºC
20
10
0
0
10
20
30
40
50
60
70
80
90 100
IC - Amperes
16
14
VCE = 325V
I C = 110A
12
I G = 10mA
10
8
6
4
2
0
0
20
40
Fig. 8. Gate Charge
60
80 100 120 140 160 180 200
QG - NanoCoulombs
10,000
f = 1 MHz
1,000
Fig. 9. Capacitance
Cies
Coes
100
0
Cres
5
10
15
20
25
30
35
40
VCE - Volts
Fig. 10. Reverse-Bias Safe Operating Area
240
200
160
120
80
TJ = 150ºC
40
RG = 2Ω
dv / dt < 10V / ns
0
100
200
300
400
500
600
700
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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