IXXN110N65B4H1 Ver la hoja de datos (PDF) - IXYS CORPORATION
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Fabricante
IXXN110N65B4H1 Datasheet PDF : 7 Pages
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XPTTM 650V GenX4TM IXXN110N65B4H1
w/ Sonic Diode
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
E
Maximum Ratings
650
V
650
V
±20
V
±30
V
215
A
200
A
110
A
70
A
730
A
ICM = 220
A
@VCE VCES
10
μs
750
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 150C
IGES
VCE = 0V, VGE = 20V
VCE(sat)
IC = 110A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650
V
4.0
6.5 V
50 A
3 mA
100 nA
1.75
2.15
2.10 V
V
VCES = 650V
IC110 = 110A
V
CE(sat)
2.1V
tfi(typ) = 85ns
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
2500V~ Isolation Voltage
Anti-Parallel Sonic Diode
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100505B(6/13)
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