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C5902 Datasheet PDF : 2 Pages
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C5902
Silicon NPN transistor epitaxial type
C5902
[ Applications ]
CFL inverter driver
[ Feature ]
High current gain charactristic
Low collector-emitter saturation voltage VCE(sat)= 0.2V(Max.) at IC/IB= 500mA/50mA
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol Maximum ratings Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current (DC)
IC
5
A
Collector current (Pulse*)
ICP
8
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to 150
C
[ Electrical characteristics (Ta=25C) ]
Characteristic
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 60
-
-
V IC= 100uA
Collector-emitter breakdown voltage BVCEO 60
-
-
V IC= 1mA
Emitter-base breakdown voltage
BVEBO 7
-
-
V IE= 10uA
Collector cut-off current
ICBO
-
-
10
uA VCB= 50V
Emitter cut-off current
IEBO
-
-
10
uA VEB= 7V
DC current gain 1
hFE 1 60
-
-
- VCE= 1V, IC= 0.1A
DC current gain 2
hFE 2 200
-
400
- VCE= 1V, IC= 2A
DC current gain 3
hFE 3 50
-
-
- VCE= 1V, IC= 5A
Collector-emitter saturation voltage VCE(sat) -
0.1
0.3
V IC= 2A, IB= 0.2A
Base-emitter saturation voltage
VBE(sat) -
0.9
1.2
V IC= 2A, IB= 0.2A
Transition frequency
fT
-
70
-
MHz VCE= 10V, IE= -50mA
Collector output capacitance
Cob
-
70
-
pF VCB= 10V, f = 1MHz, IE= 0A
Turn on time
ton
-
0.2
1
us VCC= 10V, IC= 2A
Storage time
tstg
-
1.1
2.5
us IB1= -IB2= 0.2A
Fall time
tf
-
0.2
1
us
Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.
No. C5902-20071129
PHENITEC SEMICONDUCTOR Corp.
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