SGW25N120(2009) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SGW25N120
(Rev.:2009)

Fast IGBT in NPT-technology

Infineon Technologies 

SGW25N120

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=800V,IC=25A,

VGE=15V/0V,

RG=22Ω,

Lσ1)=180nH,

Cσ1)=40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

45

40

730

30

2.2

1.5

3.7

Unit

max.

60 ns

52

950

39

2.9 mJ

2.0

4.9

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=150°C

VCC=800V,

IC=25A,

VGE=15V/0V,

RG=22Ω,

Lσ1)=180nH,

Cσ1)=40pF

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

50

36

820

42

3.8

2.9

6.7

Unit

max.

60 ns

43

990

50

4.6 mJ

3.8

8.4

1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.

Power Semiconductors

3

Rev. 2.5 Nov. 09

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