SGW25N120(2009) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SGW25N120
(Rev.:2009)

Fast IGBT in NPT-technology

Infineon Technologies 

SGW25N120

Fast IGBT in NPT-technology

• 40% lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

- SMPS

• NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

C

G

E

PG-TO-247-3

Type

SGW25N120

VCE

IC

1200V 25A

Eoff

2.9mJ

Tj

150°C

Marking

Package

SGW25N120 PG-TO-247-3

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 1200V, Tj ≤ 150°C

Gate-emitter voltage

Avalanche energy, single pulse

IC = 25A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C

Short circuit withstand time2

VGE = 15V, 100V ≤VCC ≤1200V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction and storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Symbol

VCE

IC

ICpuls

-

VGE

EAS

tSC

Ptot

Tj , Tstg

-

Value

Unit

1200

V

A

46

25

84

84

±20

V

130

mJ

10

µs

313

W

-55...+150

°C

260

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1

Rev. 2.5 Nov. 09

Share Link: