SGW25N120(2009) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SGW25N120
(Rev.:2009)

Fast IGBT in NPT-technology

Infineon Technologies 

Figure A. Definition of switching times

SGW25N120

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Leakage inductance Lσ =180nH,

and stray capacity Cσ =40pF.

Power Semiconductors

10

Rev. 2.5 Nov. 09

Share Link: