IRG4PC40 Ver la hoja de datos (PDF) - International Rectifier

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componentes Descripción

Fabricante

IRG4PC40

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4PC40K

3000

2500

2000

1500

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

Cies

1000

500

0

1

Coes

Cres

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.80

VCC = 480V

VGE = 15V

TJ = 25 ° C

1.60 IC = 25A

1.40

1.20

1.00

0.80

0

10

20

30

40

50

RG , Gate Resistance (OΩhm)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

20

VCC = 400V

I C = 25A

16

12

8

4

0

0

20 40 60 80 100 120 140

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10 RG = 10OΩhm

VGE = 15V

VCC = 480V

IC = 50 A

IC = 25 A

1

IC =12.5 A

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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