MGP21N80E Ver la hoja de datos (PDF) - Motorola => Freescale

Número de pieza

componentes Descripción

Fabricante

MGP21N80E

Insulated Gate Bipolar Transistor

Motorola => Freescale 

MGP21N60E

1.5

1.3

IC = 20 A

1.1

IC = 15 A

0.9

TJ = 125°C

VDD = 360 V

VGE = 15 V

0.7

0.5

5.0

IC = 10 A

15

25

35

45

RG, GATE RESISTANCE (OHMS)

Figure 7. Turn–Off Losses versus

Gate Resistance

1.4

TJ = 125°C

1.2 VCC = 360 V

1.0

W VGE = 15 V

RG = 20

0.8

0.6

0.4

0.2

0

0

5.0

10

15

20

IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)

Figure 9. Turn–Off Losses versus

Collector–To–Emitter Current

1.6 VCC = 360 V

W VGE = 15 V

RG = 20

1.2

0.8

IC = 20 A

IC = 15 A

IC = 10 A

0.4

0

–50 –25

0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Turn–Off Losses versus

Junction Temperature

100

10

W TJ = 125°C

RGE = 20

VGE = 15 V

1.0

1.0

10

100

1000

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

Figure 10. Reverse Biased Safe

Operating Area

4

Motorola TMOS Power MOSFET Transistor Device Data

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