BZX84C10ET3G(2012) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
BZX84C10ET3G Datasheet PDF : 6 Pages
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BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device*
VZ1 (V)
@ IZT1 = 5 mA
(Note 4)
Device
Marking Min Nom Max
ZZT1
(W)
@ IZT1
=
5 mA
VZ2 (V)
@ IZT2 = 1
mA
(Note 4)
Min Max
ZZT2
(W)
@ IZT2
=
1 mA
VZ3 (V)
@ IZT3=20 mA
(Note 4)
Min Max
ZZT3
(W)
@
IZT3=
20 mA
Max
Reverse
Leakage
Current
IR
mA
@
VR
(V)
qVZ
(mV/k)
@ IZT1=5 mA
Min Max
C (pF)
@
VR = 0
f=
1 MHz
BZX84C2V4ET1G
BA1 2.2 2.4 2.6 100 1.7 2.1 600
2.6 3.2
50
50 1.0 −3.5 0
450
BZX84C2V7ET1G
BA2 2.5 2.7 2.9 100 1.9 2.4 600
3.0 3.6
50
20 1.0 −3.5 0
450
BZX84C3V0ET1G
BA3 2.8 3.0 3.2
95
2.1 2.7 600
3.3 3.9
50
10 1.0 −3.5 0
450
BZX84C3V3ET1G
BA4 3.1 3.3 3.5
95
2.3 2.9 600
3.6 4.2
40
5.0 1.0 −3.5 0
450
BZX84C3V6ET1G
BA5 3.4 3.6 3.8
90
2.7 3.3 600
3.9 4.5
40
5.0 1.0 −3.5 0
450
BZX84C3V9ET1G
BA6 3.7 3.9 4.1
90
2.9 3.5 600
4.1 4.7
30
3.0 1.0 −3.5 −2.5 450
BZX84C4V3ET1G
BA7 4.0 4.3 4.6
90
3.3 4.0 600
4.4 5.1
30
3.0 1.0 −3.5 0
450
BZX84C4V7ET1G
BA9 4.4 4.7 5.0
80
3.7 4.7 500
4.5 5.4
15
3.0 2.0 −3.5 0.2 260
BZX84C5V1ET1G
BB1 4.8 5.1 5.4
60
4.2 5.3 480
5.0 5.9
15
2.0 2.0 −2.7 1.2 225
BZX84C5V6ET1G
BB2 5.2 5.6 6.0
40
4.8 6.0 400
5.2 6.3
10
1.0 2.0 −2 2.5 200
BZX84C6V2ET1G
BB3 5.8 6.2 6.6
10
5.6 6.6 150
5.8 6.8
6
3.0 4.0 0.4 3.7 185
BZX84C6V8ET1G
BB4 6.4 6.8 7.2
15
6.3 7.2
80
6.4 7.4
6
2.0 4.0 1.2 4.5 155
BZX84C7V5ET1G
BB5 7.0 7.5 7.9
15
6.9 7.9
80
7.0 8.0
6
1.0 5.0 2.5 5.3 140
BZX84C8V2ET1G
BB6 7.7 8.2 8.7
15
7.6 8.7
80
7.7 8.8
6
0.7 5.0 3.2 6.2 135
BZX84C9V1ET1G
BB7 8.5 9.1 9.6
15
8.4 9.6 100
8.5 9.7
8
0.5 6.0 3.8 7.0 130
BZX84C10ET1G
BB8 9.4 10 10.6 20
9.3 10.6 150
9.4 10.7
10
0.2 7.0 4.5 8.0 130
BZX84C11ET1G
BB9 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8
10
0.1 8.0 5.4 9.0 130
BZX84C12ET1G
BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9
10
0.1 8.0 6.0 10 130
BZX84C13ET1G
BC2 12.4 13 14.1 30 12.3 14 170 12.5 14.2
15
0.1 8.0 7.0 11 120
BZX84C15ET1G
BC3 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7
20
0.05 10.5 9.2 13 110
BZX84C16ET1G
BC4 15.3 16 17.1 40 15.2 17
200 15.4 17.2
20
0.05 11.2 10.4 14 105
BZX84C18ET1G
BC5 16.8 18 19.1 45 16.7 19
225 16.9 19.2
20
0.05 12.6 12.4 16 100
BZX84C20ET1G
BC6 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4
20
0.05 14 14.4 18
85
BZX84C22ET1G
BC7 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4
25
0.05 15.4 16.4 20
85
BZX84C24ET1G
BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7
25
0.05 16.8 18.4 22
80
Device*
VZ1 Below
@ IZT1 = 2 mA
Device
Marking Min Nom Max
ZZT1
Below
@ IZT1
=
2 mA
VZ2 Below
@ IZT2 =
0.1 mA
Min Max
ZZT2
Below
@ IZT4
=
0.5 mA
VZ3 Below
@ IZT3 = 10 mA
Min Max
ZZT3
Below
@ IZT3
=
10 mA
Max
Reverse
Leakage
Current
IR
mA
@
VR
(V)
qVZ
(mV/k)
Below
@ IZT1 = 2
mA
Min Max
C (pF)
@ VR
=0
f=
1 MHz
BZX84C27ET1G
BC9 25.1 27 28.9 80
25 28.9 300 25.2 29.3
45
0.05 18.9 21.4 25.3 70
BZX84C30ET1G
BD1 28 30 32
80 27.8 32 300 28.1 32.4
50 0.05 21 24.4 29.4 70
BZX84C33ET1G
BD2 31 33 35
80 30.8 35 325 31.1 35.4
55 0.05 23.1 27.4 33.4 70
BZX84C36ET1G
BD3 34 36 38
90 33.8 38 350 34.1 38.4
60 0.05 25.2 30.4 37.4 70
BZX84C39ET1G
BD4 37 39 41
130 36.7 41
350 37.1 41.5
70
0.05 27.3 33.4 41.2 45
BZX84C43ET1G
BK6 40 43 46
150 39.7 46
375 40.1 46.5
80
0.05 30.1 37.6 46.6 40
BZX84C47ET1G
BD5 44 47 50
170 43.7 50
375 44.1 50.5
90
0.05 32.9 42 51.8 40
BZX84C51ET1G
BD6 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40
BZX84C56ET1G
BD7 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40
BZX84C62ET1G
BD8 58 62 66 215 57.4 66 450 58.2 67
120 0.05 43.4 58.8 71.6 35
BZX84C68ET1G
BD9 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35
BZX84C75ET1G
BE1 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C
* Include SZ-prefix devices where applicable.
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