BC556BZL1(2000) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

BC556BZL1
(Rev.:2000)

Amplifier Transistors

ON Semiconductor 

BC556B, BC557, A, B, C, BC558B, C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –2.0 mAdc, IB = 0)

BC556

BC557

BC558

V(BR)CEO

–65

–

–45

–

–30

–

V

–

–

–

Collector–Base Breakdown Voltage

(IC = –100 µAdc)

BC556

BC557

BC558

V(BR)CBO

–80

–

–50

–

–30

–

V

–

–

–

Emitter–Base Breakdown Voltage

(IE = –100 mAdc, IC = 0)

BC556

BC557

BC558

V(BR)EBO

–5.0

–

–5.0

–

–5.0

–

V

–

–

–

Collector–Emitter Leakage Current

(VCES = –40 V)

(VCES = –20 V)

(VCES = –20 V, TA = 125°C)

BC556

BC557

BC558

BC556

BC557

BC558

ICES

–

–2.0

–100

nA

–

–2.0

–100

–

–2.0

–100

–

–

–4.0

µA

–

–

–4.0

–

–

–4.0

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