TS912AIDT(2012) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
TS912AIDT Datasheet PDF : 21 Pages
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TS912, TS912A, TS912B
3
Electrical characteristics
Electrical characteristics
Table 3.
Symbol
VCC+ = 3 V, VCC- = 0 V, RL, CL connected to VCC/2, Tamb = 25 °C
(unless otherwise specified)
Parameter
Min. Typ.
Vio
ΔVio
Iio
Iib
ICC
CMR
SVR
Avd
VOH
VOL
Io
GBP
Input offset voltage (Vic = Vo = VCC/2)
TS912
TS912A
TS912B
Tmin ≤ Tamb ≤ Tmax
TS912
TS912A
TS912B
Input offset voltage drift
Input offset current(1)
Tmin ≤ Tamb ≤ Tmax
Input bias current(1)
Tmin ≤ Tamb ≤ Tmax
Supply current (per amplifier, AVCL = 1, no load)
Tmin ≤ Tamb ≤ Tmax
Common mode rejection ratio
Vic = 0 to 3 V, Vo = 1.5 V
Supply voltage rejection ratio (VCC+ = 2.7 to 3.3 V, Vo = VCC/2)
Large signal voltage gain (RL = 10 kΩ, Vo = 1.2 V to 1.8 V)
Tmin ≤ Tamb ≤ Tmax
High level output voltage (Vid = 1 V)
RL = 100 kΩ
RL = 10 kΩ
RL = 600 Ω
RL = 100 Ω
Tmin ≤ Tamb ≤ Tmax
RL = 10 kΩ
RL = 600 Ω
Low level output voltage (Vid = -1 V)
RL = 100 kΩ
RL = 10 kΩ
RL = 600 Ω
RL = 100 Ω
Tmin ≤ Tamb ≤ Tmax
RL = 10 kΩ
RL = 600 Ω
Output short-circuit current (Vid = ±1 V)
Source (Vo = VCC-)
Sink (Vo = VCC+)
Gain bandwidth product
(AVCL = 100, RL = 10 kΩ, CL = 100 pF, f = 100 kHz)
5
1
1
200
70
50
80
3
10
2
2.95
2.9 2.96
2.3 2.6
2
2.8
2.1
30
300
900
20
40
20
40
0.8
Max.
10
5
2
12
7
3
100
200
150
300
300
400
50
70
400
100
600
Unit
mV
μV/°C
pA
pA
μA
dB
dB
V/mV
V
mV
mA
MHz
Doc ID 2325 Rev 7
5/21
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