SPD04N60C3 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SPD04N60C3

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPD04N60C3

SPU04N60C3

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Transconductance

gfs

VDS≥2*ID*RDS(on)max,

-

4.4

-S

ID=2.8A

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

Effective output capacitance,3) Co(er)

energy related

Effective output capacitance,4) Co(tr)

time related

VGS=0V, VDS=25V,

f=1MHz

VGS=0V,

VDS=0V to 480V

- 490 - pF

- 160 -

-

15

-

-

20

- pF

-

35

-

Turn-on delay time

Rise time

Turn-off delay time

Fall time

td(on)

VDD=380V, VGS=0/10V,

-

tr

ID=4.5A, RG=18Ω

-

td(off)

-

tf

-

6

- ns

2.5

-

58.5 80

9.5 14

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Qgs

Qgd

VDD=480V, ID=4.5A

Gate charge total

Qg

VDD=480V, ID=4.5A,

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=480V, ID=4.5A

-

2.2

- nC

-

8.8

-

-

19 25

-

5

-V

1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.

2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

3Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Page 3

2003-10-02

Share Link: