MRFE6VP8600HR6 Ver la hoja de datos (PDF) - Freescale Semiconductor

Número de pieza

componentes Descripción

Fabricante

MRFE6VP8600HR6

RF Power LDMOS Transistors

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

109

108

VDD = 50 Vdc

Pout = 125 W CW

107

106

105

104

90

110 130 150 170 190 210

TJ, JUNCTION TEMPERATURE (°C)

230 250

Note: The MTTF calculation for this graph is based on the thermal

resistance of the part using thermal grease TIM mounting.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 12. MTTF versus Junction Temperature -- CW

VDD = 50 Vdc, IDQ = 1400 mA, Pout = 125 W Avg.

f

MHz

Zsource

Ω

Zload

Ω

860

1.14 + j0.88

2.61 + j1.84

Zsource = Test circuit impedance as measured from

gate to gate, balanced configuration.

Zload = Test circuit impedance as measured

from drain to drain, balanced configuration.

Input

Matching

Network

Device

+ Under

Test

Output

--

Matching

Network

--

Z source

+

Z load

Figure 13. Series Equivalent Source and Load Impedance

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

8

RF Device Data

Freescale Semiconductor

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