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STAC2932B(2014) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STAC2932B
(Rev.:2014)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STAC2932B Datasheet PDF : 14 Pages
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STAC2932B
HF/VHF/UHF RF power N-channel MOSFETs
STAC244B
Air cavity
Figure 1. Pin connection
1
1
2
3
3
1. Drain
2. Source (bottom side)
3. Gate
Datasheet - production data
Features
Gold metallization
Excellent thermal stability
Common source push-pull configuration
POUT = 300 W min. with 20 dB gain @ 175 MHz
In compliance with the 2002/95/EC European
directive
ST air cavity packaging technology - STAC
package
Description
The STAC2932B is a gold metallized N-channel
MOS field-effect RF power transistor, intended for
use in 50 V DC large signal applications up to 250
MHz.
The STAC2932B benefits from the latest
generation of efficient, patent-pending package
technology, otherwise known as STAC .
Table 1. Device summary
Order code
Marking
Base qty.
Package
(1)
STAC2932BW
STAC2932
20
STAC244B
1. For more details please refer to Chapter 7: Marking, packing and shipping specifications.
Packaging
Tray
January 2014
This is information on a product in full production.
DocID15497 Rev 6
1/14
www.st.com

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