13N80K5 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

13N80K5

N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5 Power MOSFET in an I²PAKFP package

STMicroelectronics 

STFI13N80K5

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage

VGS

(V) VDS

12

10

VDD = 640V

ID=12A

AM15692v1

VDS

(V)

600

500

Figure 9. Capacitance variations

C

AM15694v1

(pF)

1000

Ciss

8

400

6

300

4

200

2

100

0

0

0 5 10 15 20 25 30 Qg(nC)

100

10

1

0.1

1

Coss

Crss

10

100 VDS(V)

Figure 10. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

1.2

ID=100µA

AM15696v1

1

0.8

0.6

0.4

0.2

Figure 11. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.5

ID=6A

VGS=10V

AM15697v1

2

1.5

1

0.5

0

-100 -50 0

50 100 150 TJ(°C)

0

-100 -50 0 50 100 150 TJ(°C)

Figure 12. Source-drain diode forward

characteristics

VSD

AM15698v1

(V)

1

TJ=-50°C

0.9

0.8

TJ=25°C

0.7

TJ=150°C

0.6

Figure 13. Output capacitance stored energy

Eoss

AM15695v1

(µJ)

12

10

8

6

4

2

0.5

0 2 4 6 8 10

ISD(A)

0

0 100 200 300 400 500 600 700 800 VDS(V)

DocID027200 Rev 2

7/13

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