ZVP0545G
300
3.4
250
200
150
VGS=-10V, ID=-50mA
100
3.2
3
ID=-1mA
2.8
ID=-250µA
2.6
50
2.4
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
0.2
0.16
VGS=0V
0.12
2.2
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
10000
1000
150℃
100
125℃
0.08
0.04
0
TJ=150℃
TJ=125℃
TJ=85℃
TJ=25℃
TJ=-55℃
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
85℃
10
1
25℃
0.1
0
90
180
270
360
450
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakge Current vs
Voltage
100
f=1MHz
Ciss
1
RDS(ON)
Limited
PW=1ms PW=100μs
0.1
10
Coss
0.01
Crss
1
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
0.001
1
ZVP0545G
Document number: DS33390 Rev. 5 - 2
4 of 7
www.diodes.com
DC
PW=10s
PW=1s
TJ(Max)=150℃
TC=25℃
VGS=4.5V
Single Pulse
PW=100ms
PW=10ms
DUT on 1*MRP Board
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
November 2015
© Diodes Incorporated