TN1625(2007) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
TN1625 Datasheet PDF : 9 Pages
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TN1625, TYN616, TYN816
Characteristics
Figure 1.
Maximum average power
Figure 2.
dissipation versus average on-state
current
Average and D.C. on-state current
versus case temperature
P(W)
16
α = 180°
14
12
10
8
6
4
2
0
0
2
IT(AV)(A)
4
6
8
360°
α
10
IT(AV)(A)
18
16
14
12
10
8
6
4
2
0
12
0
25
D.C.
α = 180°
Tcase(°C)
50
75
100
125
Figure 3.
Average and D.C. on-state current Figure 4.
versus ambient temperature
(copper surface under tab: S=1cm2)
(D2PAK)
Relative variation of thermal
impedance versus pulse duration
IT(AV)(A)
4.0
3.5
3.0
D.C.
2.5
K=[Zth/Rth]
1.00
Zth(j-c)
2.0
α = 180°
1.5
0.10
Zth(j-a)
1.0
0.5
Tamb(°C)
0.0
tp(s)
0.01
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Figure 5.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature
Figure 6. Surge peak on-state current versus
number of cycles
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2.0
1.5
IGT
1.0
IH & IL
0.5
Tj(°C)
0.0
-40 -20
0
20
40
60
ITSM(A)
200
180
160
140
120
100
80
60
Repetitive
TC=110°C
Non repetitive
Tj initial=25°C
40
80 100 120 140
20
0
1
Number of cycles
10
100
tp=10ms
One cycle
1000
3/9
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