TN1625(2007) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
TN1625 Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
TN1625, TYN616, TYN816
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
RMS on-state current (180 °Conduction angle)
Average on-state current (180 °Conduction angle)
Non repetitive surge peak on-state current
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Tc = 110 °C
Tc = 110 °C
Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Value
16
10
200
190
180
50
4
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
A2S
A/µs
A
W
°C
V
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test Conditions
Value
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
IT = 500 mA Gate open
IG = 1.2 x IGT
VD = 67 % VDRM Gate open
ITM = 32 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
MIN.
2
MAX.
25
MAX.
1.3
Tj = 125 °C
MIN.
0.2
MAX.
40
MAX.
60
Tj = 125 °C
MIN.
500
Tj = 25 °C
MAX.
1.6
Tj = 125 °C
MAX.
0.77
Tj = 125 °C
MAX.
23
Tj = 25 °C
MAX.
5
Tj = 125 °C
2
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Table 4. Thermal resistance
Symbol
Rth(j-c) Junction to case (DC)
Rth(j-a) Junction to ambient (DC)
Parameter
S = 01 cm2
D2PAK
TO-220AB
Value
1.1
45
60
Unit
°C/W
°C/W
S = copper surface under tab
2/9
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