E-TDA2030AV Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
E-TDA2030AV Datasheet PDF : 23 Pages
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TDA2030A
Device overview
Table 4.
Symbol
Electrical characteristics
(Refer to the test circuit, VS = ±16 V, Tamb = 25 °C unless otherwise specified)
Parameter
Test condition
Min. Typ. Max. Unit
Vs Supply voltage
±6
± 22 V
Id Quiescent drain current
50 80 mA
Ib
Input bias current
VS = ± 22 V
0.2 2
µA
Vos Input offset voltage
VS = ± 22 V
± 2 ± 20 mV
Ios Input offset current
± 20 ± 200 nA
d = 0.5%, Gv = 26 dB
) PO Output power
uct(s BW Power bandwidth
rod SR Slew rate
P Gv Open loop voltage gain
te Gv Closed loop voltage gain
sole d Total harmonic distortion
t(s) - Ob d2
Second order CCIF
intermodulation distortion
uc d3
Third order CCIF
intermodulation distortion
rod eN Input noise voltage
te P iN Input noise current
Obsole S/N Signal-to-noise ratio
f = 40 to 15000 Hz
VS = ± 19 V;
Po = 15 W;
RL= 4 Ω 15
RL= 8 Ω 10
RL= 8 Ω 13
RL= 4 Ω
f = 1 kHz
f = 1 kHz
25.5
Po = 0.1 to 14 W;
f = 40 to 15 000 Hz;
RL= 4 Ω
f = 1 kHz
Po = 0.1 to 9 W, f = 40 to 15 000Hz
RL= 8 Ω
18
12
16
100
8
80
26
0.08
0.03
0.5
W
kHz
V/µsec
dB
26.5 dB
%
PO = 4W, f2 – f1 = 1kHz, RL = 4Ω
0.03
%
f1 = 14 kHz, f2 = 15 kHz
2f1 – f2 = 13 kHz
B = Curve A
B = 22Hz to 22kHz
B = Curve A
B = 22Hz to 22kHz
RL = 4Ω, Rg = 10kΩ, B = Curve A
PO = 15W
0.08
%
2
µV
3 10 µV
50
pA
80 200 pA
106
dB
PO = 1W
94
dB
Ri Input resistance (pin 1)
(open loop) f = 1 kHz
0.5 5
MΩ
SVR Supply voltage rejection
RL = 4 Ω, Rg = 22 kΩ
Gv = 26 dB, f = 100 Hz
54
dB
Tj
Thermal shutdown junction
temperature
145
°C
Doc ID 1459 Rev 2
3/23
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