ST173S12PCP1L Ver la hoja de datos (PDF) - Vishay Semiconductors
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ST173S12PCP1L Datasheet PDF : 9 Pages
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ST173SPbF Series
Inverter Grade Thyristors Vishay High Power Products
(Stud Version), 175 A
100 000
10 000
1000
4
2
1
20 joules per pulse
7.5
0.5
0.3
0.2
0.1
100
ST173S Series
Sinusoidal pulse
tp
10
10
100
1000
10 000
100 000
10 000
1000
100
ST173S Series
Rectangular pulse
tp dI/dt = 50 A/µs
20 joules per pulse
23
1
0.4 0.5
0.3
0.2
5 10
0.1
10
10
100
1000
10 000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
10
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST173S Series
Frequency limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Document Number: 94367
Revision: 29-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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