SMBG110CA-M3/5B Ver la hoja de datos (PDF) - Vishay Semiconductors
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SMBG110CA-M3/5B Datasheet PDF : 5 Pages
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SMBG5.0A thru SMBG188CA
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
SMBG (DO-215AA)
PRIMARY CHARACTERISTICS
VWM
VBR (uni-directional)
5.0 V to 188 V
6.4 V to 231 V
VBR (bi-directional)
PPPM
IFSM (uni-directional only)
TJ max.
6.4 V to 231 V
600 W
100 A
150 °C
Polarity
Uni-directional, bi-directional
Package
SMBG (DO-215AA)
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DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBG10CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLCIATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: SMBG (DO-215AA)ï€
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102ï€
M3 suffix meets JESD 201 class 2 whisker test
Polarity: for uni-directional types the band denotes cathode
end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2)
Peak pulse current with a 10/1000 μs waveform (1)
Peak forward surge current 8.3 ms single half sine-wave (2)
PPPM
IPPM
IFSM
Operating junction and storage temperature range
TJ, TSTG
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
VALUE
600
See next table
60
-65 to +175
UNIT
W
A
A
°C
Revision: 16-Jan-18
1
Document Number: 89421
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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