SIS414DN Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SIS414DN Datasheet PDF : 13 Pages
| |||
New Product
SiS414DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.070
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.056
0.042
0.028
0.01
0.014
ID = 10 A
TJ = 125 °C
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.000
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
0.2
80
0
- 0.2
60
ID = 5 mA
40
- 0.4
ID = 250 μA
- 0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power (Junction-to-Ambient)
10
1 ms
10 ms
1
100 ms
0.1
TA = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 66588
S10-1047-Rev. A, 03-May-10
Share Link: 