SIS414DN Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SIS414DN Datasheet PDF : 13 Pages
| |||
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
VGS = 5 V thru 2.5 V
40
8
30
VGS = 2 V
6
20
4
SiS414DN
Vishay Siliconix
TC = 25 °C
10
0
0.0
0.030
VGS = 1.5 V
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2
TC = 125 °C
TC = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
0.026
0.022
960
Ciss
720
0.018
VGS = 2.5 V
0.014
VGS = 4.5 V
0.010
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 10 A
8
VDS = 10 V
6
VDS = 15 V
VDS = 20 V
4
2
0
0.0
4.4
8.8
13.2
17.6
22.0
Qg - Total Gate Charge (nC)
Gate Charge
480
Coss
240
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 10 A
1.6
1.4
VGS = 4.5 V
1.2
VGS = 2.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 66588
S10-1047-Rev. A, 03-May-10
www.vishay.com
3
Share Link: 