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T1342

Power MOSFET –60V, 62mΩ, –12A, Single P-Channel

ON Semiconductor 

Ordering number : ENA1559B

SFT1342

Power MOSFET

–60V, 62mΩ, –12A, Single P-Channel

Features

• Low On-Resistance

• Low Gate Charge

• Pb-free and RoHS Compliance

• High Speed Switching

• ESD Diode-Protected Gate

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter

Symbol

Drain to Source Voltage

VDSS

Gate to Source Voltage

VGSS

Drain Current (DC)

ID

Drain Current

PW≤10μs, duty cycle≤1%

IDP

Power Dissipation

Tc=25°C

PD

Junction Temperature

Tj

Storage Temperature

Tstg

Thermal Resistance Ratings

Parameter

Junction to Case Steady State

Junction to Ambient *1

Note : *1 Insertion mounted

Symbol

RθJC

RθJA

Value

Unit

–60

V

±20

V

–12

A

–48

A

1.0

W

15

W

150

°C

−55 to +150

°C

Value

8.33

125

Unit

°C/W

http://onsemi.com

Electrical Connection

P-Channel

2, 4

1

Packing Type:TL

3

Marking

T1342

LOT No.

TL

4

1

2

IPAK(TP)

3

4

2

1

3

DPAK(TP-FA)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet.

Semiconductor Components Industries, LLC, 2014

September, 2014

91014 TKIM TC-00003149/60612 TKIM/O1409PA TKIM TC-00002077 No.A1559-1/6

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