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Número de pieza
componentes Descripción
RJK5026DPP-M0 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
RJK5026DPP-M0
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
RJK5026DPP-M0 Datasheet PDF : 7 Pages
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RJK5026DPP-M0
10
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Tc = 25
°
C
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
1shot pulse
0.01
10
μ
100
μ
1m
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 4.38
°
C/W, Tc = 25
°
C
P
DM
D=
PW
T
PW
T
10 m 100 m
1
10
100
1000
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
10
Ω
Vin
10 V
D.U.T.
Vout
Monitor
R
L
V
DD
= 250 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
R07DS0422EJ0100 Rev.1.00
May 26, 2011
Page 5 of 6
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