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VS-MBR20100CTP Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
VS-MBR20100CTP
Vishay
Vishay Semiconductors Vishay
VS-MBR20100CTP Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum instantaneous 
reverse current
IRM (1)
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
VF(TO)
rt
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
10 A
20 A
10 A
20 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated VR
VALUES
0.80
0.95
0.70
0.85
0.10
6
0.433
15.8
400
8.0
10 000
UNITS
V
mA
V
m:
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance, 
junction to case per leg
Typical thermal resistance, 
case to heatsink
Maximum thermal resistance, 
junction to ambient
TJ
TStg
RthJC
RthCS
RthJA
DC operation
Mounting surface, smooth and greased
DC operation
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style D2PAK
Case style TO-262
VALUES
-65 to +150
-65 to +175
2.0
UNITS
°C
0.50
°C/W
50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
MBRB20100CT
MBR20100CT-1
Revision: 18-Oct-16
2
Document Number: 94306
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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