NTE325 Ver la hoja de datos (PDF) - NTE Electronics

Número de pieza

componentes Descripción

Fabricante

NTE325

Silicon NPN RF Power Transistor 50W @ 30MHz

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ

Max Unit

Functional Test

Common–Emitter Amplifier Power Gain

Collector Efficiency

GPE VCC = 13.6V, POUT = 50W,

η

IC(max) = 6.13A, f = 30MHz

11

15

50

–

– dB

–%

Series Equivalent Input Impedance

Series Equivalent Output Imnpedance

Zin VCC = 13.6V, POUT = 50W,

Zout f = 30MHz

– 1.56–j.89 –

Ω

– 174–j.50 –

Ω

1.040 (26.4) Max

.520 (13.2)

C

.230

(5.84)

E

E

.100 (2.54)

B

.385 (9.8)

Dia

.005 (0.15)

8–32–NC–3A

Wrench Flat

.168 (4.27)

.750

(19.05)

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