LS358 Ver la hoja de datos (PDF) - Linear Integrated System
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LS358 Datasheet PDF : 2 Pages
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MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
│VBE1-VBE2│
CHARACTERISTIC
Base Emitter Voltage Differential
∆│(VBE1-VBE2)│/°C Base Emitter Voltage Differential4
Change with Temperature
LS358
0.4
1
1
TYP.
MAX.
TYP.
│IB1-IB2│
│∆ (IB1-IB2)│/°C
Base Current Differential
Base Current Differential4
Change with Temperature
5
MAX.
0.5
TYP.
hFE1/hFE2
DC Current Gain Differential
5
TYP.
UNITS
mV
mV
µV/°C
nA
nA/°C
%
CONDITIONS
IC = -10 µA
VCE = -5V
IC = -10 µA
VCE = -5V
TA = -55°C to +125°C
IC = -10 µA
VCE = -5V
IC = -10 µA
VCE = -5V
TA = -55°C to +125°C
IC = -10 µA
VCE = -5V
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.0 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only.
4. Not tested; guaranteed by design.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;
nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
5.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality
discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil
and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the
director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro
Power Systems.
Linear Integrated Systems
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Doc 201158 05/16/2014 Rev#A9 ECN# LS358
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