645(2001) Ver la hoja de datos (PDF) - M.S. Kennedy Corporation
Número de pieza
componentes Descripción
Fabricante
645 Datasheet PDF : 6 Pages
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ABSOLUTE MAXIMUM RATINGS
+VHV
High Voltage Supply
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○ +90V
+V Input Voltage ±5V IN
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+VBIAS Bias Input Voltage
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○ +10V
IOUT
Peak Output Current
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○ 200mA
TST Storage Temperature Range -65°C to +150°C
TLD Lead Temperature Range○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +300°C
(Solder 10 Seconds)
TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +175°C
TC Case Operating Temperature
MSK645
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-40°C to +85°C
MSK645(B) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +125°C
ELECTRICAL SPECIFICATIONS
Parameter
STATIC CHARACTERISTICS
Quiescent Current (VHV)
Quiescent Current (+VBIAS)
VHV Power Supply Range
VBIAS Power Supply Range
Video Input Voltage
Thermal Resistance (junction-to-case) 2
Test Conditions 1
VIN=No Connect RL=∞
VIN=No Connect RL=∞
VOUT=+50VDC
Output Stage
Group A
MSK 645(B)
MSK 645
Units
Subgroup Min. Typ. Max. Min. Typ. Max.
1,2,3
1,2,3
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1,2,3
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0.6 2.0
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0.6 2.0 mA
- 0.01 0.5 - 0.01 0.5 mA
20 60 90 20 60 90 V
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5 10 4
5 10 V
0.5 0.85 1.2 0.4 0.85 1.3 V
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25 27
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25 27 °C/W
DYNAMIC CHARACTERISTICS
Video Output Voltage 6
Video Gain
Video Gain Flatness 2
Video Output Rise/Fall Time
Video Output Overshoot 2
Bandwidth -3dB
High Level
Low Level
F=1MHz;VOUT=+15Vto+45V
F=10Hz to 60MHz;VOUT=30VPP
VOUT=+15Vto+45V
VOUT=10VPP VINTR=10nS
CL=6.5pF
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50 59
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50 59
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V
4
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5
10
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5 10 V
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45 62 80 45 60 80 V/V
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- ±1.0 ±2.0 - ±1.0 ±3.0 dB
4
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3.0 4.0
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3.0 5.0 nS
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10
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12 %
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100 150 - 100 150 - MHz
NOTES:
1 +VHV=60V; +VBIAS=5V; RL=10KΩ; unless otherwise specified.
2 Parameter is guaranteed by design but not tested. Typical specifications are representative of actual device
performance at 25°C but are for reference only.
3 Military grade devices ('B' suffix) shall be 100% tested to subgroups 1,2,3 and 4.
4 Subgroup 5 and 6 testing available upon request.
5 Subgroup 1,4 TA=TC=+25°C
Subgroup 2,5 TA=TC=+125°C
Subgroup 3,6 TA=TC=-55°C
6 Refer to the video clip point curve on the Typical Performance Curves page.
2
Rev. B 12/01
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