MPSA94 Ver la hoja de datos (PDF) - KEC
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MPSA94 Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
·High Breakdown Voltage.
·Complementary to MPSA44.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature Range
Tstg
RATING
-400
-400
-6
-300
625
150
-55～150
UNIT
V
V
V
mA
mW
℃
℃
MPSA94
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut off Current
Collector Cut off Current
Emitter Cutoff Current
V(BR)CBO
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
ICES
IEBO
DC Current Gain *
hFE
Collector-Emitter Saturation Voltage *
VCE(sat)
Base-Emitter Saturation Voltage
*
VBE(sat)
Collector Output Capacitance
Cob
*Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%
TEST CONDITION
IC=-100μA, IE=0
IC=-1mA, IB=0
IC=-100μA, IB=0
IE=-10μA, IC=0
VCB=-300V, IE=0
VCE=-400V, IB=0
VEB=-4V, IC=0
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
IC=-10mA, IB=-1mA
IC=-10mA, IB=-1mA
VCB=-20V, IE=0, f=1MHz
MIN.
-400
-400
-400
-6.0
-
-
-
40
50
45
40
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
7
MAX.
-
-
-
-
-100
-1
-100
-
300
-
-
-0.5
-0.75
-
UNIT
V
V
V
V
nA
μA
nA
V
V
pF
2002. 5. 28
Revision No : 1
1/2
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