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MPSA94 Datasheet PDF : 1 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MPSA94
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown
voltage.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-400
V
-400
V
-6
V
-500
mA
625
mW
+150
oC
-55 to +150 oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -400
Collector-Emitter Breakdown Voltage
BVCEO -400
Emitter-Base Breakdown Volatge
BVEBO
-6
Collector Cutoff Current
ICBO
-
ICES
-
Emitter Cutoff Current
IEBO
-
VCE(sat)1
-
Collector-Emitter Saturation Voltage(1)
VCE(sat)2
-
Base-Emitter Saturation Voltage(1)
VCE(sat)3
-
VBE(sat)
-
hFE1
40
DC Current Gain(1)
hFE2
50
hFE3
45
hFE4
40
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max Unit
-
-
V
-
-
V
-
-
V
-
-100
nA
-
-500
nA
-
-100
nA
-
-0.35
V
-
-0.5
V
-
-0.75
V
-
-0.75
V
-
-
-
-
300
-
-
-
-
-
-
-
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-400V
VCE=-400V
VEB=-4V
IC=-1mA, IB=-0.1mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-50mA, VCE=-10V
IC=-100mA, VCE=-10V
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