MIC5021 Ver la hoja de datos (PDF) - Microchip Technology

Número de pieza

componentes Descripción

Fabricante

MIC5021

High-Speed, High-Side MOSFET Driver with Charge Pump and Overcurrent Limit

Microchip Technology 

MIC5021

DC CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN,

Gate CL = 1500 pF (IRF540 MOSFET).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Gate Fall Time

tF

—

400

500

ns Note 6

Max. Operating Frequency

fMAX

100

150

—

kHz Note 7

Note 1: When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense

MOSFET’s current transfer ratio.

2: DC measurement.

3: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V.

4: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V.

5: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage)

to 17V.

6: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V.

7: Frequency where gate on voltage reduces to 17V with 50% input duty cycle.

8: Gate on time tG(ON) and tG(OFF) are not 100% production tested.

DS20005677A-page 4

 2016 Microchip Technology Inc.

Share Link: