BUP309 Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BUP309

IGBT

Siemens AG 

BUP 309

IGBT

Preliminary data

• High switching speed

• Low tail current

• Latch-up free

• Avalanche rated

• Low forward voltage drop

Remark: The TO-218 AB case doesn't solve the

standards VDE 0110 and UL 508 for creeping distance

Type

BUP 309

VCE IC

1700V 25A

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

RGE = 20 kΩ

Gate-emitter voltage

DC collector current

TC = 25 °C

TC = 90 °C

Pulsed collector current, tp = 1 ms

TC = 25 °C

TC = 90 °C

Avalanche energy, single pulse

IC = 15 A, VCC = 50 V, RGE = 25 Ω

L = 200 µH, Tj = 25 °C

Power dissipation

TC = 25 °C

Chip or operating temperature

Storage temperature

Package

TO-218 AB

Symbol

VCE

VCGR

VGE

IC

ICpuls

EAS

Ptot

Tj

Tstg

Semiconductor Group

1

Pin 1

G

Pin 2

C

Pin 3

E

Ordering Code

Q67078-A4204-A2

Values

Unit

1700

V

1700

± 20

A

25

16

50

32

mJ

23

W

310

-55 ... + 150 °C

-55 ... + 150

Jul-30-1996

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