EDB102S Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

EDB102S

SILICON BRIDGE RECTIFIERS

Galaxy Semi-Conductor 

Production specification

SILICON BRIDGE RECTIFIERS

EDB101S--EDB106S

SFEATURES

z Rating to 1000V PRVP

z Surge overload rating to 30 Amperes peak

z Ideal for printed circuit board

Pb

Lead-free

z Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

z Lead solderable per MIL-STD-202 method 208

z Glass passivated chip junctions

z Plastic material has UL flammability classification94V-O

z Polarity symbols molded on body

Maximum Ratings (@TA = 25°C unless otherwise specified)

Characteristic

Symbol EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S

Peak Repetitive Reverse Voltage

VRRM

50

RMS Reverse Voltage

VRMS

35

DC Blocking Voltage

VDC

50

Maximum average forward Output current

@TA=55℃

IF(AV)

Peak forward surge current

8.3ms single half-sine-wave

IFSM

superimposed on rated load

100

150

200

300

400

70

105

140

210

280

100

150

200

300

400

1.0

30

Thermal Characteristics

UNITS

V

V

V

A

A

Characteristic

Symbol EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S

Typical junction calacitance (NOTE 2)

CJ

Operating junction temperature range

TJ

Storage temperature range

TSTG

15

10

- 55 ---- + 150

- 55 ---- + 150

Electrical Characteristics (@TA = 25°C unless otherwise specified)

UNITS

pF

℃

℃

Characteristic

Symbol EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S

Maximum instantaneous forward voltage at

VF

1.0

1.0 A

Maximum reverse current @TA=25℃

10.0

IR

at rated DC blocking voltage @TA=100℃

1.0

Maximum reverse recovery time (NOTE 1)

trr

50

NOTE: 1. Test conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.

2. Measured at 1 MHz and applied reverse voltage of 4.0 v olts.

UNITS

V

μA

mA

ns

Document Number: DFM706AA

www.gmicroelec.com

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