MBM29DL322BE Ver la hoja de datos (PDF) - Spansion Inc.

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Fabricante

MBM29DL322BE

32 M (4 M × 8/2 M × 16) BIT Dual Operation

Spansion Inc. 

MBM29DL32XTE/BE80/90

s FEATURES

• 0.23 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes (Refer to “MBM29DL32XTE/BE Device Bank Divisions” in

“s FEATURES”)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

• Compatible with JEDEC-standard world-wide pinouts

48-pin TSOP (1) (Package suffix : TN − Normal Bend Type, TR − Reversed Bend Type)

63-ball FBGA (Package suffix : PBT)

• Minimum 100,000 program/erase cycles

• High performance

80 ns maximum access time

• Sector erase architecture

Eight 4 Kword and sixty-three 32 Kword sectors in word mode

Eight 8 Kbyte and sixty-three 64 Kbyte sectors in byte mode

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• HiddenROM region

64 Kbyte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence

Factory serialized and protected to provide a secure electronic serial number (ESN)

• WP/ACC input pin

At VIL, allows protection of boot sectors, regardless of sector group protection/unprotection status

At VACC, increases program performance

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector group protection

Hardware method disables any combination of sector groups from program or erase operations

Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

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