MBM29DL322BE Ver la hoja de datos (PDF) - Spansion Inc.

Número de pieza

componentes Descripción

Fabricante

MBM29DL322BE

32 M (4 M × 8/2 M × 16) BIT Dual Operation

Spansion Inc. 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20881-7E

FLASH MEMORY

CMOS

32 M (4 M × 8/2 M × 16) BIT Dual Operation

MBM29DL32XTE/BE80/90

s DESCRIPTION

The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or

2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system

3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also

be reprogrammed in standard EPROM programmers.

MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate

memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories, with the additional capability

of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either

a program or an erase) operation is simultaneously taking place on the other bank.

s PRODUCT LINE UP

(Continued)

Part No.

Power Supply Voltage VCC (V)

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

s PACKAGES

48-pin plastic TSOP (1)

MBM29DL32XTE/BE

80

3.3

+0.3

−0.3

80

90

3.0

+0.6

−0.3

90

80

90

30

35

48-pin plastic TSOP (1)

63-ball plastic FBGA

Marking Side

(FPT-48P-M19)

Marking Side

(FPT-48P-M20)

(BGA-63P-M01)

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