MBM30LV0128 Ver la hoja de datos (PDF) - Fujitsu

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componentes Descripción

Fabricante

MBM30LV0128

128 M (16 M × 8) BIT NAND-type

Fujitsu 

MBM30LV0128

s FEATURES

• 3.3 V-only operating voltage (2.7 V to 3.6 V)

Minimizes system level power requirements

• Organization

Memory Cell Array : (16 M + 512 K) × 8 bit

Data Register : (512 + 16) × 8 bit

• Automatic Program and Erase

Page Program : (512 + 16) Byte

Block Erase : (16 K + 512) Byte

• 528 Byte Page Read Operation

Random Access : 10 µs (Max.)

Serial Access : 35 ns (Max.)

• Fast Program and Erase

Program Time : 200 µs (Typ.) / page

Block Erase Time : 2 ms (Typ.) / block

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

• 1,000,000 write/erase cycles guaranteed (ECC system required)

• Command Register Operation

• Package

48-pin TSOP Type I (0.5 mm pitch)

Normal/Reverse Type

• Data Retention : 10 years

s PACKAGES

48-pin plastic TSOP (II)

(FPT-48P-M19)

(Normal Bend)

(FPT-48P-M20)

(Reverse Bend)

2

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