DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBM30LV0128 Ver la hoja de datos (PDF) - Fujitsu

Número de pieza
componentes Descripción
Fabricante
MBM30LV0128 Datasheet PDF : 41 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
MBM30LV0128
Read (3) : 50h
The Read (3) mode has identical timing to that of Read (1) and (2) . However, while Read (1) and (2) are used
to access the array, Read (3) is used to access the 16 byte spare area. When the 50h command is executed,
the pointer will be set to an address space between columns 512 and 527. The values of Y will complete the
address decoding. During this operation, only address bits A3 to A0 are used to determine the starting column
address; A7 to A4 are ignored. A23 to A9 are used to determine the starting row address.
CE
CLE
ALE
WE
RE
R/B
I/O0
to I/O7
Command 50h
Page (Row)
Address X
Starting Address
YXX
0
255
511 527
Data Output
Y (Column Address)
Figure 3 Read Mode (3) Operation
Sequential Read
Each RE pulse used to output data from the data register will cause the column address pointer to increment
by one. When the final column has been reached, the next page will be automatically loaded into the data register.
The R/B signal may be used to monitor the completion of the data transfer.
R/B
I/O0 to I/O7
0
00h/01h/50h Address Input Data
255 511 527 0
255 511 527 0
Data
255 511 527 0
Data
255 511 527
00h, SE = L
01h, SE = L
00h, SE = H
Figure 4 Sequential Read
50h, SE = L
11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]