2N4261UB(Rev1) Ver la hoja de datos (PDF) - Microsemi Corporation
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2N4261UB Datasheet PDF : 4 Pages
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio
IC = 1.0mAdc, VCE = 1Vdc
IC = 10mAdc, VCE = 1Vdc
IC = 30mAdc, VCE = 1Vdc
Symbol
hFE
Min.
25
30
20
Max.
Unit
150
Collector-Emitter Saturation Voltage
IC = 1mAdc, IB = 0.1mAdc
IC = 10mAdc, IB = 1.0mAdc
Base-Emitter Saturation Voltage (Non-Saturated)
VCE = 1Vdc, IC = 1mAdc
VCE = 1Vdc, IC = 10mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small–Signal Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 100MHz
Output Capacitance
VCB = 4Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
VCC = 17Vdc; IC = 10mAdc
Turn-Off Time
VCC = 17Vdc; IC = 10mAdc
(4) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
VCE(sat)
VBE
0.6
Symbol
|hfe|
Cobo
Cibo
Min.
20
Symbol
ton
toff
Min.
0.15
Vdc
0.35
0.80
Vdc
1.0
Max.
Unit
2.5
pF
2.5
pF
Max.
Unit
2.5
ηs
3.5
ηs
T4-LDS-0150 Rev. 1 (092064)
Page 2 of 4
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