SIM-22ST(2010) Ver la hoja de datos (PDF) - ROHM Semiconductor
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SIM-22ST Datasheet PDF : 3 Pages
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Infrared light emitting diode, side-view type
SIM-22ST
The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens.
Applications
Light source for sensors
Features
1) Compact package (4.7x4.6 mm) with lens.
2) High efficiency, high output.
3) Emission spectrum well suited to silicon detectors
(P = 950 nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
Dimensions (Unit : mm)
4.1
4.6 ± 0.1
Notes:
1. Tolerances are ± 0.2 unless
otherwise indicated.
2. Value in parenthese is size
at base of leads.
2-C0.7
0.15
R0.75
R0.5
2−0.65
2−0.45
1
2
(2.54)
R0.5
0.40
0.64
1 Cathode
2 Anode
Absolute maximum ratings (Ta=25C)
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width = 0.1ms, duty ratio 1%
Symbol
Limits
Unit
IF
50
mA
VR
5
V
PD
80
mW
IFP∗
0.5
A
Topr
−25 to +85
°C
Tstg
−30 to +100
°C
Electrical and optical characteristics (Ta=25C)
Parameter
Symbol Min. Typ.
Emitting strength
IE
−
0.8
Emitting strength
IE
0.48 1.3
Forward voltage
VF
−
1.3
Reverse current
IR
−
−
Peak light emitting wavelength
λP
−
950
Spectral line half width
Δλ
−
40
Half-viewing angle
θ1/2
−
±30
Response time
tr tf
−
1.0
Cut-off frequency
fc
∗ According to our measurement procedures.
−
1.0
Max. Unit
− mW/sr IF=10mA
1.94 mA IF=10mA∗
1.6
V IF=50mA
10
μA VR=5V
−
nm IF=10mA
−
nm IF=20mA
−
deg IF=50mA
−
μs IF=50mA
− MHz IF=50mA
Conditions
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○c 2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
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