T14M256A-8J(2001) Ver la hoja de datos (PDF) - Taiwan Memory Technology
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T14M256A-8J Datasheet PDF : 9 Pages
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tm TE
CH
T14M256A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage to Vss Pote ntial
Inputs to Vss Potential
Power Dissipation
Storage Temperature
RATING
-0.5 to + 6
-0.5 to Vcc +0.5
1.0
-60 to +150
UNIT
V
V
W
°C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYM
MIN
TYP
MAX
UNIT
Supply Voltage
Vcc
Typ-5%
5
Typ+5%
V
Input Voltage, low
VIL
-0.3
-
0.8
V
Input Voltage, high
VIH
2.2
-
Vcc+0.3
V
Ambient Temperature
TA
0
-
70
°C
Note: VIL (min.) = -2.0V for pulse width ≤ 20ns, VIH (max.) = +7.0V for pulse width ≤ 20ns.
TRUTH TABLE
CS
OE
WE
H
X
X
L
H
H
L
L
H
L
X
L
MODE
Not Selected
Output Disable
Read
Write
I/O1- I/O8
High-Z
High-Z
Data Out
Data In
Vcc
ISB, I SB1
Icc
Icc
Icc
OPERATING CHARACTERISTICS
(Vcc = 5V± 5%, Vss = 0V, Ta = 0 to 70°C)
PARAMETER
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
SYM.
I LI
ILO
VOL
VOH
Icc
TEST CONDITIONS
Vin=Vss to Vcc
VI/O=Vss to Vcc , CS =VIH
or OE= VIH or WE = VIL
IOL= + 8.0mA
IOH= - 4.0mA
CS =VIL, I/O=0mA
-7
Cycle = MIN.
-8
Duty = 100%
-10
-12
-15
Standby Power
Supply Current
ISB CS=VIH, Cycle=MIN, Duty=100%
ISB1 CS ≥ Vcc-0.2V
Note: Typical characteristics are at Vcc = 5V, Ta = 25°C
MIN.
-10
-10
-
2.4
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
MAX. UNIT
+10 uA
+10 uA
0.4 V
-
V
125 mA
120 mA
110 mA
100 mA
90 mA
15 mA
2 mA
Taiwan Memory Technology, Inc. reserves the right P. 2
to change products or specifications without notice.
Publication Date: SEP. 2001
Revision: G
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