VN0808L Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
VN0808L Datasheet PDF : 4 Pages
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VN0808L/LS, VQ1006P
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Static
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-Resistanceb
Forward Transconductanceb
Common Source Output Conductanceb
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
gos
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "15 V
TJ = 125_C
VDS = 80 V, VGS = 0 V
TJ = 125_C
VDS = 72 V, VGS = 0 V
TJ = 125_C
VDS = 10 V, VGS = 10 V
VGS = 5 V, ID = 0.3 A
VGS = 10 V, ID = 1 A
TJ = 125_C
VDS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.1 A
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
Turn-On Time
tON
Turn-Off Time
tOFF
Notes
a. For DESIGN AID ONLY, not subject to production testing..
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
VDD = 25 V, RL = 23 W
ID ^ 1 A, VGEN = 10 V
RG = 25 W
Limits
VN0808L/LS
VQ1006P
Typa Min Max Min Max Unit
125
80
90
V
1.6
0.8
2
0.8 2.5
"100
"100
nA
"500
10
500
mA
1
500
1.8
1.5
1.5
A
3.8
5
3.6
4
4.5
W
6.7
8
8.6
350 170
170
mS
0.23
35
50
60
15
40
50
pF
2
10
10
6
10
10
ns
8
10
10
VNDQ09
www.vishay.com
11-2
Document Number: 70214
S-04279—Rev.D, 16-Jul-01
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